型号/品牌/封装
品类/描述
库存
价格(含税)
资料
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品类: MOS管描述: FAIRCHILD SEMICONDUCTOR FDB52N20TM 晶体管, MOSFET, N沟道, 52 A, 200 V, 0.041 ohm, 10 V, 5 V730210-99¥9.9600100-499¥9.4620500-999¥9.13001000-1999¥9.11342000-4999¥9.04705000-7499¥8.96407500-9999¥8.8976≥10000¥8.8644
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品类: MOS管描述: MOSFET Transistor, N Channel, 14A, 300V, 0.24Ω, 10V, 5V684410-99¥7.3440100-499¥6.9768500-999¥6.73201000-1999¥6.71982000-4999¥6.67085000-7499¥6.60967500-9999¥6.5606≥10000¥6.5362
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品类: 双极性晶体管描述: 单晶体管 双极, NPN, 350 V, 150 W, 15 A, 300 hFE55645-49¥13.806050-199¥13.2160200-499¥12.8856500-999¥12.80301000-2499¥12.72042500-4999¥12.62605000-7499¥12.5670≥7500¥12.5080
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品类: MOS管描述: N沟道600V - 0.9ヘ - 8A - TO- 220 / D2PAK快速二极管MDmesh⑩功率MOSFET N-CHANNEL 600V - 0.9ヘ - 8A - TO-220/D2PAK Fast Diode MDmesh⑩ Power MOSFET629310-99¥9.5520100-499¥9.0744500-999¥8.75601000-1999¥8.74012000-4999¥8.67645000-7499¥8.59687500-9999¥8.5331≥10000¥8.5013
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品类: MOS管描述: 晶体管, MOSFET, N沟道, 8 A, 900 V, 0.6 ohm, 10 V, 4 V34615-49¥17.503250-199¥16.7552200-499¥16.3363500-999¥16.23161000-2499¥16.12692500-4999¥16.00725000-7499¥15.9324≥7500¥15.8576
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品类: MOS管描述: STMICROELECTRONICS STB40NF20 晶体管, MOSFET, N沟道, 40 A, 200 V, 45 mohm, 10 V, 3 V29375-49¥30.981650-199¥29.6576200-499¥28.9162500-999¥28.73081000-2499¥28.54542500-4999¥28.33365000-7499¥28.2012≥7500¥28.0688
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品类: MOS管描述: STB19NF20 系列 200 V 0.16 Ohm 表面贴装 N 沟道 功率 MOSFET - D2PAK70195-24¥6.196525-49¥5.737550-99¥5.4162100-499¥5.2785500-2499¥5.18672500-4999¥5.07205000-9999¥5.0261≥10000¥4.9572
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品类: IGBT晶体管描述: 在NPT技术的快速IGBT Fast IGBT in NPT-technology37785-49¥27.916250-199¥26.7232200-499¥26.0551500-999¥25.88811000-2499¥25.72112500-4999¥25.53025000-7499¥25.4109≥7500¥25.2916
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品类: 双极性晶体管描述: ON SEMICONDUCTOR MJB41CT4G. 功率晶体管, NPN, 100V, D2-PAK904910-49¥1.107050-99¥1.0496100-299¥1.0086300-499¥0.9840500-999¥0.95941000-2499¥0.93482500-4999¥0.8979≥5000¥0.8897
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 1200V 40A 150000mW 3Pin(2+Tab) TO-263AA85441-9¥57.327810-99¥54.0385100-249¥51.5950250-499¥51.2191500-999¥50.84321000-2499¥50.42032500-4999¥50.0444≥5000¥49.8094
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品类: MOS管描述: D2PAK N-CH 30V 38A410820-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: MOS管描述: HEXFET® N 通道功率 MOSFET 超过 55A,Infineon252810-99¥8.4840100-499¥8.0598500-999¥7.77701000-1999¥7.76292000-4999¥7.70635000-7499¥7.63567500-9999¥7.5790≥10000¥7.5508
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品类: MOS管描述: D2PAK N-CH 200V 16A49435-24¥3.442525-49¥3.187550-99¥3.0090100-499¥2.9325500-2499¥2.88152500-4999¥2.81785000-9999¥2.7923≥10000¥2.7540
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品类: MOS管描述: Trans MOSFET P-CH 250V 9.4A 3Pin(2+Tab) D2PAK T/R48215-49¥19.913450-199¥19.0624200-499¥18.5858500-999¥18.46671000-2499¥18.34762500-4999¥18.21145000-7499¥18.1263≥7500¥18.0412
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品类: MOS管描述: QFET® N 通道 MOSFET,高达 5.9A,Fairchild Semiconductor Fairchild Semiconductor 的新型 QFET® 平面 MOSFET 使用先进的专利技术为广泛的应用提供最佳的工作性能,包括电源、PFC(功率因数校正)、直流-直流转换器、等离子显示面板 (PDP)、照明镇流器和运动控制。 它们通过降低导通电阻 (RDS(on)) 来减少通态损耗,并通过降低栅极电荷 (Qg) 和输出电容 (Coss) 来减少切换损耗。 通过使用先进的 QFET® 工艺技术,Fairchild 可提供比竞争平面 MOSFET 设备更高的品质因素 (FOM)。4910
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品类: IGBT晶体管描述: IGBT 分立,Fairchild Semiconductor ### IGBT 分立件和模块,Fairchild Semiconductor 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备,以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中,将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。507810-99¥7.2840100-499¥6.9198500-999¥6.67701000-1999¥6.66492000-4999¥6.61635000-7499¥6.55567500-9999¥6.5070≥10000¥6.4828
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品类: MOS管描述: MOSFET N-CH 30V 80A D2PAK521220-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: MOS管描述: MOSFET N-CH 30V 62A TO-263AB754620-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: MOS管描述: FAIRCHILD SEMICONDUCTOR FCB11N60TM 功率场效应管, MOSFET, N沟道, 11 A, 600 V, 320 mohm, 10 V, 5 V22435-49¥17.304350-199¥16.5648200-499¥16.1507500-999¥16.04721000-2499¥15.94362500-4999¥15.82535000-7499¥15.7514≥7500¥15.6774
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品类: MOS管描述: N沟道 850V 20A70071-9¥41.931410-99¥39.5255100-249¥37.7383250-499¥37.4633500-999¥37.18831000-2499¥36.87902500-4999¥36.6041≥5000¥36.4322
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品类: IGBT晶体管描述: IGBT 分立,Fairchild Semiconductor ### IGBT 分立件和模块,Fairchild Semiconductor 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备,以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中,将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。99355-49¥13.852850-199¥13.2608200-499¥12.9293500-999¥12.84641000-2499¥12.76352500-4999¥12.66885000-7499¥12.6096≥7500¥12.5504
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品类: MOS管描述: MOSFET N-CH 100V 28A D2PAK108110-99¥10.3800100-499¥9.8610500-999¥9.51501000-1999¥9.49772000-4999¥9.42855000-7499¥9.34207500-9999¥9.2728≥10000¥9.2382
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品类: MOS管描述: D2PAK P-CH 20V 24A329020-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: MOS管描述: D2PAK N-CH 20V 110A480420-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: MOS管描述: INFINEON IRL2505STRLPBF 场效应管, MOSFET553910-99¥9.6000100-499¥9.1200500-999¥8.80001000-1999¥8.78402000-4999¥8.72005000-7499¥8.64007500-9999¥8.5760≥10000¥8.5440
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品类: MOS管描述: D2PAK N-CH 40V 130A17165-49¥27.073850-199¥25.9168200-499¥25.2689500-999¥25.10691000-2499¥24.94492500-4999¥24.75985000-7499¥24.6441≥7500¥24.5284
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品类: MOS管描述: Trans MOSFET N-CH 55V 51A 3Pin(2+Tab) D2PAK Tube268110-99¥7.0320100-499¥6.6804500-999¥6.44601000-1999¥6.43432000-4999¥6.38745000-7499¥6.32887500-9999¥6.2819≥10000¥6.2585
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品类: MOS管描述: MOSFET MOSFT 60V 43A 16.2mOhm 22NC Qg33975-24¥5.697025-49¥5.275050-99¥4.9796100-499¥4.8530500-2499¥4.76862500-4999¥4.66315000-9999¥4.6209≥10000¥4.5576
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品类: MOS管描述: N沟道 100V 120A225410-99¥8.1240100-499¥7.7178500-999¥7.44701000-1999¥7.43352000-4999¥7.37935000-7499¥7.31167500-9999¥7.2574≥10000¥7.2304
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品类: MOS管描述: N沟道 60V 48A190910-99¥8.7120100-499¥8.2764500-999¥7.98601000-1999¥7.97152000-4999¥7.91345000-7499¥7.84087500-9999¥7.7827≥10000¥7.7537